SiC

Silicon carbide, SiC radical
Flags: Detected, RATE12
Empirical: CSi
Mass: 40 amu
Dipole moment: 1.700 D
Heat of formation: 714.7 kJ mol^-1
Added to system: 2003-04-28 18:00:51

Reactions: Formation | Destruction

10 SiC formation reactions

	Reaction	α	β	γ	T_l - T_u (K)
1	SiC₂ + CRPHOT → SiC + C	1.30e-17	0.00	750.00	10 - 41000
2	SiCH₂ + CRPHOT → SiC + H₂	1.30e-17	0.00	750.00	10 - 41000
3	HCSi⁺ + e^- → SiC + H	1.50e-7	-0.50	0.00	10 - 300
4	SiC₂⁺ + e^- → SiC + C	1.50e-7	-0.50	0.00	10 - 300
5	SiC₃⁺ + e^- → SiC + C₂	1.50e-7	-0.50	0.00	10 - 300
6	SiCH₂⁺ + e^- → SiC + H₂	1.50e-7	-0.50	0.00	10 - 300
7	C + SiH → SiC + H	6.59e-11	0.00	0.00	10 - 300
8	O + SiC₂ → SiC + CO	4.00e-11	0.00	0.00	10 - 300
9	HCSi + PHOTON → SiC + H	1.00e-9	0.00	1.70	10 - 41000
10	SiC₃ + PHOTON → C₂ + SiC	2.00e-10	0.00	2.30	10 - 41000

	Reaction	α	β	γ	T_l - T_u (K)
1	C⁺ + SiC → SiC⁺ + C	2.50e-9	-0.50	0.00	10 - 300
2	H⁺ + SiC → SiC⁺ + H	3.00e-9	-0.50	0.00	10 - 300
3	S⁺ + SiC → SiC⁺ + S	3.70e-9	-0.50	0.00	10 - 41000
4	SiC + CRPHOT → Si + C	1.30e-17	0.00	250.00	10 - 41000
5	C⁺ + SiC → Si⁺ + C₂	2.50e-9	-0.50	0.00	10 - 41000
6	H₃⁺ + SiC → HCSi⁺ + H₂	3.00e-9	-0.50	0.00	10 - 41000
7	H₃O⁺ + SiC → HCSi⁺ + H₂O	3.00e-9	-0.50	0.00	10 - 41000
8	HCO⁺ + SiC → HCSi⁺ + CO	2.00e-9	-0.50	0.00	10 - 41000
9	He⁺ + SiC → Si⁺ + C + He	2.00e-9	-0.50	0.00	10 - 41000
10	He⁺ + SiC → Si + C⁺ + He	2.00e-9	-0.50	0.00	10 - 41000
11	OH⁺ + SiC → HCSi⁺ + O	4.50e-9	-0.50	0.00	10 - 41000
12	N + SiC → Si + CN	5.00e-11	0.00	0.00	10 - 300
13	N + SiC → SiN + C	5.00e-11	0.00	0.00	10 - 300
14	O + SiC → Si + CO	5.00e-11	0.00	0.00	10 - 300
15	O + SiC → SiO + C	5.00e-11	0.00	0.00	10 - 300
16	SiC + PHOTON → Si + C	1.00e-10	0.00	2.30	10 - 41000

Variation of log fractional abundance (relative to H₂) with log time (years) in a dark cloud model. Ref. RATE12 paper.